D86FQ1 Datasheet | GE

~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF350,351 D86FQ2,Q1 15AMPERE5 400, 350 VOLT5 R05(ON) =0.3 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features - Polysilicon gate - Improved stability and reliability -...