D86FN2 Overview
~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF250,251 D86FN2,M2 30 AMPERES 200, 150 VOLTS ROS(ON) =Q.085 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE',s advanCed Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies,...
D86FN2 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement