* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86FQ1
GE
188.45 KB
Field effect power transistor.
~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF350,351 D86FQ2,Q1 15AMPERE5 400, 350 VOLT5 R05(ON) =0.3 il This series of N-Channel Enhancement-mode Power M.
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