D88FQ1, D88FQ2 Datasheet - GE

D88FQ1 FIELD EFFECT POWER TRANSISTOR

~D~[P~lf FIELD EFFECT POWER TRANSISTOR IRFP350,351 D88FQ2.Q1 15 AMPERES 400, 350 VOLTS ROS(ON) =0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including:-switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area.

D88FQ1 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D88FQ2-GE.pdf

D88FQ1 Datasheet Preview — This datasheet PDF includes multiple part numbers: D88FQ1, D88FQ2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

D88FQ1, D88FQ2

Manufacturer:

File Size:

187.56 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: D88FQ1, D88FQ2.
Please refer to the document for exact specifications by model.

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D88FQ1 D88FQ2 FIELD EFFECT POWER TRANSISTOR GE

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