* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D88FQ1
GE
187.56 KB
Field effect power transistor.
~D~[P~lf FIELD EFFECT POWER TRANSISTOR IRFP350,351 D88FQ2.Q1 15 AMPERES 400, 350 VOLTS ROS(ON) =0.3 n This series of N-Channel Enhancement-mode Powe.
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