* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D88FQ2
GE
187.56 KB
Field effect power transistor.
~D~[P~lf FIELD EFFECT POWER TRANSISTOR IRFP350,351 D88FQ2.Q1 15 AMPERES 400, 350 VOLTS ROS(ON) =0.3 n This series of N-Channel Enhancement-mode Powe.
📁 Related Datasheet
D88FQ1 FIELD EFFECT POWER TRANSISTOR (GE)
D88FK2 FIELD EFFECT POWER TRANSISTOR (GE)
D88FL2 FIELD EFFECT POWER TRANSISTOR (GE)
D88FM2 FIELD EFFECT POWER TRANSISTOR (GE)
D88FN2 FIELD EFFECT POWER TRANSISTOR (GE)
D88FR1 FIELD EFFECT POWER TRANSISTOR (GE)
D88FR2 FIELD EFFECT POWER TRANSISTOR (GE)
D880 NPN Transistor (UTC)
D880 Silicon NPN Power Transistors (SavantIC)
D880-Y NPN Silicon Power Transistors (MCC)
