* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRF613
GE
190.89 KB
Field effect power transistor.
DO D[]~[F~ FIELD EFFECT POWER TRANSISTOR IRF612,613 2.0 AMPERES 200, 150 VOLTS ROS(ON) = 2.4 n This series of N-Channel Enhancement-mode Power MOSFE.
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