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IRF613 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

Download the IRF613 datasheet PDF. This datasheet also includes the IRF612 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRF612-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRF613
Manufacturer GE
File Size 190.89 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet IRF613 Datasheet

Overview

DO D[]~[F~ FIELD EFFECT POWER TRANSISTOR IRF612,613 2.0 AMPERES 200, 150 VOLTS ROS(ON) = 2.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

Key Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

📁 Similar Datasheet

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