IRF613 Datasheet and Specifications PDF

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF61.

*Low RDS(on)
*VGS Rated at ±20V
*Silicon Gate for Fast Switching Speed
*Rugged
*Low Drive Requirements isc Product Specification IRF613
*DESCRITION
*Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse.
*ABSOL.

DO D[]~[F~ FIELD EFFECT POWER TRANSISTOR IRF612,613 2.0 AMPERES 200, 150 VOLTS ROS(ON) = 2.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to.

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
* Excellent thermal stability - Ease of paralle.