IRF643 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

Download the IRF643 datasheet PDF. This datasheet also includes the IRF642 variant, as both parts are published together in a single manufacturer document.

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IRF643 field effect power transistor by GE - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRF642-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRF643
Manufacturer	GE
File Size	202.11 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRF643 Datasheet

Overview

~[R1D~LP~ FIELD EFFECT POWER TRANSISTOR IRF642,643 16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D.

This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IRF643	N-Channel Mosfet Transistor	Inchange Semiconductor
	IRF643	N-Channel Power MOSFET	Fairchild Semiconductor

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