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IRF643, IRF642 - FIELD EFFECT POWER TRANSISTOR

GE

The IRF643 by GE is a FIELD EFFECT POWER TRANSISTOR. Below is the official datasheet preview.

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IRF643 FIELD EFFECT POWER TRANSISTOR by GE - Datasheet Preview — Official preview page of the IRF643 FIELD EFFECT POWER TRANSISTOR datasheet (GE).

Datasheet Details

Part number	IRF643, IRF642
Manufacturer	GE
File Size	202.11 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRF642-GE.pdf
Note	This datasheet PDF includes multiple part numbers: IRF643, IRF642. Please refer to the document for exact specifications by model.
Additional preview pages of the IRF643 datasheet.

IRF643 Product details

Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

📁 IRF643 Similar Datasheet

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IRF640FI - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF640FP - N-Channel MOSFET (STMicroelectronics)
IRF640L - Power MOSFET (International Rectifier)
IRF640N - Power MOSFET (International Rectifier)
IRF640NL - Power MOSFET (International Rectifier)

Other Datasheets by GE

IRF642 - FIELD EFFECT POWER TRANSISTOR
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IRF632 - FIELD EFFECT POWER TRANSISTOR
IRF633 - FIELD EFFECT POWER TRANSISTOR
IRF712 - FIELD EFFECT POWER TRANSISTOR

Published: Feb 9, 2019 |