IRF833, IRF832 Datasheet - GE

IRF833 FIELD EFFECT POWER TRANSISTOR

~D~~~U FIELD EFFECT POWER TRANSISTOR IRF832,833 4.0 AMPERES 500, 450 VOLTS ROS(ON) = 2.0 .0. This series of N~Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with goo.

IRF833 Features

* Polysilicon gate -Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRF832-GE.pdf

IRF833 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF833, IRF832. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRF833, IRF832

Manufacturer:

File Size:

201.68 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRF833, IRF832.
Please refer to the document for exact specifications by model.

IRF833 Distributor

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IRF833 IRF832 FIELD EFFECT POWER TRANSISTOR GE