Datasheet Details
| Part number | IRF833 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.70 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF833-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | IRF833 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.70 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF833-InchangeSemiconductor.pdf |
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·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements APPLICATIONS ·Desinged for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID PD Tj Tstg Drain-Source Voltage (VGS=0) 450 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 4.0 A Power Dissipation@TC=25℃ 75 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.67 80 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF833 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF833 | N-Channel Power MOSFET | Fairchild Semiconductor |
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IRF833 | FIELD EFFECT POWER TRANSISTOR | GE |
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