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IRF833 - N-Channel MOSFET Transistor

General Description

Drain Current ID= 4.0A@ TC=25℃ Drain Source Voltage- : VDSS= 450V(Min) Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) Fast Switching Speed Simple Drive Requirements APPLICATIONS

Desinged for high efficiency switch mode power supply.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF833 DESCRIPTION ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements APPLICATIONS ·Desinged for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID PD Tj Tstg Drain-Source Voltage (VGS=0) 450 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 4.0 A Power Dissipation@TC=25℃ 75 W Max.