Download IRF832 Datasheet PDF
Inchange Semiconductor
IRF832
DESCRIPTION - Drain Current - ID= 4.0A@ TC=25℃ - Drain Source Voltage- : VDSS= 500V(Min) - Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) - Fast Switching Speed - Simple Drive Requirements APPLICATIONS - Desinged for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID PD Tj Tstg Drain-Source Voltage (VGS=0) 500 V Gate-Source Voltage ±20 Drain Current-continuous@ TC=25℃ 4.0 A Power Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.67 80 ℃/W ℃/W isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdf Factory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification - ELECTRICAL CHARACTERISTICS...