Datasheet Details
| Part number | IRF831FI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 231.14 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF831FI-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor IRF831FI.
| Part number | IRF831FI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 231.14 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF831FI-InchangeSemiconductor.pdf |
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·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A PD Power Dissipation@TC=25℃ 35 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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