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IRF831FI - N-Channel MOSFET Transistor

General Description

Drain Current ID= 3.0A@ TC=25℃ Drain Source Voltage- : VDSS= 450V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for hi

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isc N-Channel MOSFET Transistor IRF831FI DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A PD Power Dissipation@TC=25℃ 35 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.