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IRF830 - N-Channel MOSFET Transistor

Key Features

  • With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A ‹ Absolute Maximum Ratings Tc=25 SYMBOL.

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MOSFET IRF830 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A ‹ Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER VDSS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain Current-continuous@ TC=25 Ptot Total Dissipation@TC=25 Tj Max. Operating Junction temperature Tstg Storage temperature RATING 500 20 4.5 100 150 -65~150 UNIT V V A W ‹ Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage VGS=0; ID=0.25mA Gate threshold voltage VDS= VGS; ID=0.25mA Drain-source on-stage resistance VGS=10V; ID=2.