IRF830
IRF830 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
Features
With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source
D=4.5A
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VDSS
Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction temperature
Tstg Storage temperature
RATING 500 20 4.5 100 150
-65~150
UNIT V V A W
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS VGS(TH) RDS(ON)
IGSS IDSS VSD
Drain-source breakdown voltage VGS=0; ID=0.25m A
Gate threshold voltage
VDS= VGS; ID=0.25m A
Drain-source on-stage resistance VGS=10V; ID=2.7A
Gate source leakage current
VGS=20V ;VDS=0
Zero gate voltage drain current VDS=500V; VGS=0
Diode forward voltage
IF=4.5A; VGS=0
TO-220
MIN MAX UNIT
500 V 2 4V 1.5 100 n A 1.0 u A 1.6...
