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IRF830
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET
TYPE IRF830
s s s s s
V DSS 500 V
R DS(on) < 1.5 Ω
ID 4.5 A
TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
2 3
DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.