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IRF830PBF - N-Channel Type Power MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1. Gate { { 2. Drain ̻ ඔ̵ ̻ ̻ { 3. Source BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A General.

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Datasheet Details

Part number IRF830PBF
Manufacturer Thinki Semiconductor
File Size 1.18 MB
Description N-Channel Type Power MOSFET
Datasheet download datasheet IRF830PBF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1. Gate { { 2. Drain ̻ ඔ̵ ̻ ̻ { 3. Source BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.