IRF830PBF
Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
Key Features
- Gate { {
- Drain ̻ ඔ̵ ̻ ̻ {
- Source BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A