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IRF830PBF Datasheet N-channel Type Power MOSFET

Manufacturer: Thinki Semiconductor

Overview: IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power.

General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

The TO-220C pkg is well suited for adaptor power unit and small power inverter application.

Key Features

  • ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1. Gate { { 2. Drain ̻ ඔ̵ ̻ ̻ { 3. Source BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A General.

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