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IRF830P-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Other Datasheets by Advanced Power Electronics Corp

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IRF830 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IRF830I-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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IRF840P-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power Electronics Corp. IRF830P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, Halogen-free G S D BV DSS RDS(ON) ID 500V 1.5Ω 4.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The IRF830P-3 is in the TO-220 through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached heatsink is required. This device is well suited for low voltage applications such as DC/DC converters and DC motor drives.