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IRF840P-HF-3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. IRF840P-HF-3 N-channel Enhancement-mode Power MOSFET Ease of Paralleling Simple Drive Requirement Fast Switching Performance RoHS-pliant, Halogen-free G S D BV DSS RDS(ON) ID 500V 0.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness.

The IRF840P-HF-3 is in the TO-220 package, which is widely used for mercial and industrial applications, and is well-suited for high voltage applications such as switch mode power supplies, DC-AC converters and high-current high-speed switching circuits.

G D TO-220 (P) S Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 500 ±20 8 5.1 32 125 1 2 Units V V A A A W W/°C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 320 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 1.0 62 Unit °C/W °C/W Ordering Information IRF840P-HF-3TB RoHS-pliant halogen-free TO-220, shipped in tubes ©2010 Advanced Power Electronics Corp.

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