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IRF840I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.

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IRF840I RoHS-compliant Product Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 0.85Ω 8A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 ±20 8 5.