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IRF840 - 500V N-Channel MOSFET

Key Features

  • 8A, 500V.
  • rDS(ON) = 0.850Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB TOP VIEW SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRF840 Rev. B IRF840.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRF840A Power MOSFET
IRF840B 500V N-Channel MOSFET
IRF840S Power MOSFET
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IRF842 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet January 2002 IRF840 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. Ordering Information PART NUMBER PACKAGE BRAND IRF840 TO-220AB IRF840 NOTE: When ordering, include the entire part number.