Fairchild Semiconductor IRF840A
Power MOSFET
| Part No. | IRF840A |
|---|---|
| Datasheet | IRF840A Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.)ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient IRF840A BVDSS = 500 V RDS(on) = 0.85Ω ID = 8 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Value 500 8 5.1 32 ±30 640 8 13.4 3.5 134 1.08 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/°C °C Typ. -0.5 -- Max.
