IRF840A
IRF840A is Power MOSFET manufactured by TRANSYS.
Power MOSFET
VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
Drain
Gate Drain Source
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage Drain to Source Leakage Current
Gate to Source Leakage Current Gate Threshold Voltage
V(BR)DSS VGS = 0 VDC, ID = 250µA
IDSS
VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C
IGSS VGS(th)
VGS = +30VDC VGS = -30VDC VDS = VGS, ID = 250µA
Static Drain to Source On
- Resistance RDS(on) VGS= 10VDC, ID = 4.8A
Value
Min Typ
500 ----2.0
- --
Max Unit
- Volt
25 250 µA
100 n A -100 n A 4.0 Volt
Gate Charge Gate to Source Charge Gate to Drain Charge Input Capacitance Output Capacitance Transfer Capacitance
Turn On Delay Time Turn Off Delay Time Rise Time Fall Time Continuous Source Current Pulsed Source Current Forward Voltage (Diode) Single Pulse Avalanche Energy Repetive Avalanche Energy Avalanche Current
QG...
