Inchange Semiconductor IRF840A
N-Channel MOSFET
| Part No. | IRF840A |
|---|---|
| Datasheet | IRF840A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Source Voltage- : VDSS= 500V(Min)●Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Switch mode power supply
●Uninterruptable power supply
●High speed power switching
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A IDM Drain Current-Single Plused 32 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62 ℃/W IRF840A isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source...