IRF840S
Overview
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 500V
- Lower RDS(ON): 0.638Ω (Typ.)
| Part | IRF840S |
|---|---|
| Description | Power MOSFET |
| Category | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Size | 224.49 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF840S | Kexin Semiconductor | N-Channel MOSFET |
| IRF840SPBF | International Rectifier | HEXFET Power MOSFET |
| IRF840STRR | International Rectifier | Power MOSFET |
| IRF840S | International Rectifier | Power MOSFET |
| IRF840S | Vishay | Power MOSFET |