Datasheet4U Logo Datasheet4U.com

IRF840S - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) =500V.
  • ID =8 A (VGS = 10V).
  • RDS(ON) ＜0.85Ω (VGS = 10V).
  • Fast switching.
  • Low thermal resistance d g s.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Non-Repetitive Avalanche Energy (Note.1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note.2) Thermal Resistance. Junction- to-Ambient Thermal Resistance Junction to Mounting.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF840S Power MOSFET Fairchild Semiconductor
IRF840S Power MOSFET International Rectifier
IRF840S Power MOSFET Vishay
IRF840S N-Channel MOSFET INCHANGE
IRF840SPBF HEXFET Power MOSFET International Rectifier

Other Datasheets by Kexin Semiconductor

Part Number Description
IRF1404Z N-Channel MOSFET
IRF3205 Power MOSFET
IRF3808S N-Channel MOSFET
IRF540NS N-Channel MOSFET
IRF630S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET IRF840S (KRF840S) MOSFET ■ Features ● VDS (V) =500V ● ID =8 A (VGS = 10V) ● RDS(ON) ＜0.85Ω (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Non-Repetitive Avalanche Energy (Note.1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance Junction to Mounting Base Junction Temperature Storage Temperature Range Ta = 25℃ Ta = 100℃ Tc = 25℃ Ta = 25℃ Symbol VDS VGS ID IDM IAR PD EAS EAR dv/dt RthJA RthJB TJ Tstg Note.1: L = 14mH, IAS = 8A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C. Note.