Datasheet Details
| Part number | IRF840B |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 919.65 KB |
| Description | 500V N-Channel MOSFET |
| Datasheet |
 IRF840B Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Key Features
- 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V.
- Low gate charge ( typical 41 nC).
- Low Crss ( typical 35 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability D GD S TO-220 IRF Series GD S TO-220F IRFS Series G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS.