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IRF840B Datasheet 500v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRF840B/IRFS840B February 2005 IRF840B/IRFS840B 500V N-Channel MOSFET.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Key Features

  • 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V.
  • Low gate charge ( typical 41 nC).
  • Low Crss ( typical 35 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D GD S TO-220 IRF Series GD S TO-220F IRFS Series G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS.

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