IRF840B Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor...
IRF840B Key Features
- 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
- Low gate charge ( typical 41 nC)
- Low Crss ( typical 35 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
