Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Features
- 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V.
- Low gate charge ( typical 41 nC).
- Low Crss ( typical 35 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
D
GD S
TO-220
IRF Series
GD S
TO-220F
IRFS Series
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS.
IRF840B Datasheet
