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IRF840B - D Series Power MOSFET

Key Features

  • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
  • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 Note.
  • Lead (Pb)-containing terminations are not RoHS-compliant. Exe.

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Datasheet Details

Part number IRF840B
Manufacturer Vishay
File Size 163.74 KB
Description D Series Power MOSFET
Datasheet download datasheet IRF840B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRF840B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 30 4 7 Single 0.85 TO-220AB S D G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply.