Vishay IRF840B
D Series Power MOSFET
FEATURES
● Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)● Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching
● Material categorization: For definitions of compliance please see Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply.
APPLICATIONS
● Consumer Electronics - Displays (LCD or Plasma TV)● Server and Telecom Power Supplies - SMPS
● Industrial - Welding - Induction Heating - Motor Drives
● Battery Chargers TO-220AB IRF840BPbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VDS VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energyb Maximum...