IRF840B Description
IRF840B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. at 25 °C () Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 30 4 7 Single 0.85 TO-220AB S D G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free.
IRF840B Key Features
- Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
- Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg