(IRF820 / IRF822) N-Channel Enhancement Mode Power MOS Transistors
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
®
IRF840
N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH™ MOSFET
TYPE IRF840
s s s s s
V DSS 500 V
R DS(on) < 0.85 Ω
ID 8 A
TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
2 3
DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.