IRF840PBF
Overview
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
- RDS(on) (Max 0.85 Ω )@VGS=10V
- Gate Charge (Typical 35nC)
- Improved dv/dt Capability
- High ruggedness
- 100% Avalanche Tested
- Gate { {
- Drain
- Source BVDSS = 500V RDS(ON) = 0.85 ohm ID = 8.8A
