Thinki Semiconductor IRF840PBF
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.| Part No. | IRF840PBF |
|---|---|
| Datasheet | IRF840PBF Download |
| Manufacturer |  Thinki Semiconductor |
| Description | N-Channel Type Power MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on) (Max 0.85 Ω )@VGS=10V● Gate Charge (Typical 35nC)
● Improved dv/dt Capability
● High ruggedness
● 100% Avalanche Tested 1. Gate { { 2. Drain
● ◀▲
●
● { 3. Source BVDSS = 500V RDS(ON) = 0.85 ohm ID = 8.8A
GENERAL DESCRIPTION
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. TO-220CABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min. - (Note 1) (Note 2) (Note 1) (Note 3) Value 500 8.8 5.5 35.2 ±30 559 13.7 5 137 1.1 - 55 ~ 150 300 Value Typ.
