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IRF840PBF - N-Channel Type Power MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 0.85 Ω )@VGS=10V.
  • Gate Charge (Typical 35nC).
  • Improved dv/dt Capability.
  • High ruggedness.
  • 100% Avalanche Tested 1. Gate { { 2. Drain.
  • ◀▲.
  • { 3. Source BVDSS = 500V RDS(ON) = 0.85 ohm ID = 8.8A General.

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Datasheet Details

Part number IRF840PBF
Manufacturer Thinki Semiconductor
File Size 965.27 KB
Description N-Channel Type Power MOSFET
Datasheet download datasheet IRF840PBF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF840PBF ® IRF840PBF Pb Free Plating Product Pb 8.8A,500V Heatsink N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.85 Ω )@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source BVDSS = 500V RDS(ON) = 0.85 ohm ID = 8.8A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.