IRF840FI Datasheet | Inchange Semiconductor

FEATURES - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area - Rugged Gate Oxide Technology DESCRIPTION - Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 450 ±20 ID Drain Current-Continuous 4.5 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX UNIT 3.12 ℃/W 62.5 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdf Factory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...