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IRF841FI - N-Channel MOSFET Transistor

General Description

purpose applications.

Key Features

  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Rugged Gate Oxide Technology.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF841FI FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 450 ±20 V V ID Drain Current-Continuous 4.5 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX UNIT 3.12 ℃/W 62.