Download IRF840 Datasheet PDF
Inchange Semiconductor
IRF840
IRF840 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
FEATURES - Drain Current - ID=8.0A@ TC=25℃ - Drain Source Voltage- : VDSS= 500V(Min) - Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) - DESCRITION - Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay drivers. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±20 ID Drain Current-Continuous 8A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.0 62.5 ℃/W ℃/W isc Website:.iscsemi.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor...