IRF842 - N-Channel MOSFET Transistor

Inchange Semiconductor

General Description

purpose applications.

Key Features

Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Rugged Gate Oxide Technology.

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IRF842 n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRF842
Manufacturer	Inchange Semiconductor
File Size	62.75 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRF842 Datasheet

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF842 FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±20 V V ID Drain Current-Continuous 7A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.