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IRF840LC Datasheet Power MOSFET

Manufacturer: Vishay

Overview: www.vishay.com IRF840LC Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 39 10 19 Single 0.

General Description

This new series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.

In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications.

Key Features

  • Ultra low gate charge.
  • Reduced gate drive requirement Available.
  • Enhanced 30 V VGS rating.
  • Reduced Ciss, Coss, Crss.
  • Extremely high frequency operation Available.
  • Repetitive avalanche rated.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts.

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