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IRF840AS - Power MOSFET

Key Features

  • Low gate charge Qg results in simple drive requirement.
  • Improved gate, avalanche, and dynamic dV/dt Available ruggedness.
  • Fully characterized capacitance and avalanche voltage and current Available.
  • Effective Coss specified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For e.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF840AS, SiHF840AS, IRF840AL, SiHF840AL www.vishay.com Vishay Siliconix Power MOSFET I2PAK (TO-262) D2PAK (TO-263) D G SD G D G S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38 9.0 18 Single 0.85 FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt Available ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Effective Coss specified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.