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IRF840L - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The I2PAK (TO-262) is a power package capable of accommodating die sizes up to HEX-4.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number IRF840L
Manufacturer Vishay
File Size 160.92 KB
Description Power MOSFET
Datasheet download datasheet IRF840L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRF840L, SiHF840L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 63 9.3 32 Single 0.85 I2PAK (TO-262) D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a power package capable of accommodating die sizes up to HEX-4.