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IRF840S - N-Channel MOSFET

Key Features

  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 125 W Tj Max.