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IRF840 - Power MOSFET

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Datasheet Details

Part number IRF840
Manufacturer TRANSYS
File Size 147.16 KB
Description Power MOSFET
Datasheet download datasheet IRF840 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF840 Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D G N Channel S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C IGSS VGS(th) VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250µA Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 4.