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IRF840LCS/LCL
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
D
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage Drain to Source Leakage Current
Gate to Source Leakage Current Gate Threshold Voltage
V(BR)DSS VGS = 0 VDC, ID = 250µA
IDSS
VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C
IGSS VGS = +20VDC VGS = -20VDC
VGS(th) VDS = VGS, ID = 250µA
Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 4.
IRF840LCS Datasheet
