IRF840 Datasheet | Nell Power Semiconductor

DESCRIPTION The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators. convertors, UPS, switching mode power supplies and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. FEATURES RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(63n C Max.) Low reverse transfer capacitance (CRSS = 120p F typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature TO-220AB (IRF840A) D (Drain) G (Gate) S (Source) PRODUCT...