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IRF830I-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost.

The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.

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IRF830I-HF Halogen-Free Product Advanced Power Electronics Corp. Ease of Paralleling Fast Switching Characteristic Simple Drive Requirement RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 1.5 4.5A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 +20 4.5 2.8 18 36.