IRF830 Overview
IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Design curves of the MTP4N45 are applicable for this product. © Semiconductor ponents Industries, LLC, 2006 August, 2006 − Rev.



