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IRF830AS - Power MOSFET

Key Features

  • Low gate charge Qg results in simple drive requirement.
  • Improved gate, avalanche and dynamic dV/dt ruggedness Available.
  • Fully characterized capacitance and avalanche voltage and current Available.
  • Effective Coss specified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For.

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Full PDF Text Transcription (Reference)

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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL www.vishay.com Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-2 G SD D G S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 6.3 11 Single 1.40 ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) SiHF830AS-GE3 IRF830ASPbF FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness Available • Fully characterized capacitance and avalanche voltage and current Available • Effective Coss specified • Material categorization: for definitions of compliance please see www.vishay.