IRF830AS Description
l l Two Transistor Forward Half Bridge and Full Bridge Notes through are on page 10 .irf. 1 5/4/00 IRF830AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage...
IRF830AS Key Features
- Uninterruptable Power Supply
- High Speed Power Switching
- VDSS 500V RDS(on) max 1.40Ω ID 5.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss specified (See AN 1001)
- D2Pak TO-262