IRF8301MTRPBF Datasheet | International Rectifier

StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling patible  l Ultra-low Package Inductance l Optimized for high speed switching or high current switch (Power Tool) l Low Conduction and Switching Losses l patible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS RDS(on) RDS(on) 30V max ±20V max 1.3mΩ@10V 1.9mΩ@ 4.5V DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF8301MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging...