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IRF8301MPbF - Power MOSFET

Download the IRF8301MPbF datasheet PDF. This datasheet also covers the IRF8301MTRPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile.

Key Features

  • 00 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 01 10 100 VDS, Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area 3.0 Typical VGS(th) Gate threshold Voltage (V) 160 2.5 120 2.0 80 40 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 13. Maximum Drain Current vs. Case Temperature 1200 1000 800 1.5 ID = 100µA ID = 150µA ID = 250µA 1.0 ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 14. Typical Threshold Voltage vs. Junction Temperature.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF8301MTRPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF830 PowerMOS transistor NXP
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IRF830 N-CHANNEL ENHANCEMENT MODE MOSFET TRSYS
IRF830 N-Channel Power MOSFET Intersil Corporation
IRF830 N-Channel Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF8301MTRPBF Power MOSFET
IRF830 Power MOSFET
IRF8302MPBF Power MOSFET
IRF8304MPBF Power MOSFET
IRF8306MPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized for high speed switching or high current switch (Power Tool) l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.3mΩ@10V 1.9mΩ@ 4.5V MT DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.