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IRF8304MPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: IRF8304MPbF l RoHS Compliant and Halogen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.FET and some Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested DirectFET® Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 28nC 7.9nC 4.2nC 39nC 21nC 1.8V Applicable DirectFET Outline and Substrate Outline (see p.

General Description

The IRF8304MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) IRF8304MPbF 1000 100.

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