Description
The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- Current (A)
Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage
4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback February 17, 2014
ISD, Reverse Drain Current (A)
1000
100
10
TJ = 150°C 1 TJ = 25°C
TJ = -40°C VGS = 0V
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
ID, Drain-to-Source Current (A)
1000 100 10
IRF8302MPbF.
IRF8302MPBF Datasheet
