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IRF8306MPBF - Power MOSFET

General Description

The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Key Features

  • Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage 4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback May 7, 2014 IRF8306MPbF ISD, Reverse Drain Current (A) ID, Drain Current (A) 1000 100 10 TJ = 150°C 1 TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) 1000 100 10.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF8306MPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  25nC 6.7nC 3.0nC 29nC 22nC 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  G D S SD l 100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.