Description
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage
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May 7, 2014
IRF8306MPbF
ISD, Reverse Drain Current (A)
ID, Drain Current (A)
1000
100
10
TJ = 150°C 1 TJ = 25°C
TJ = -40°C VGS = 0V
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
ID, Drain-to-Source Current (A)
1000 100 10.
IRF8306MPBF Datasheet
