Datasheet Details
| Part number | IRF8306MPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 280.06 KB |
| Description | Power MOSFET |
| Datasheet | IRF8306MPBF-InternationalRectifier.pdf |
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Overview: IRF8306MPbF HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching 25nC 6.7nC 3.0nC 29nC 22nC 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques G D S SD l 100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.
| Part number | IRF8306MPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 280.06 KB |
| Description | Power MOSFET |
| Datasheet | IRF8306MPBF-InternationalRectifier.pdf |
|
|
|
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
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