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IRF830APBF - HEXFET Power MOSFET

Key Features

  • CODE YEAR 7 = 1997 WEEK 19 LINE C Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 18mH RG = 25Ω, IAS = 5.0A. (See Figure 12) ISD ≤ 5.0A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Data and specifications subject to change without notice. IR WORLD.

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PD- 94820 SMPS MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN 1001) IRF830APbF HEXFET® Power MOSFET VDSS 500V Rds(on) max 1.40Ω ID 5.0A TO-220AB GDS www.DataSheet4U.