* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFD1Z1
GE
197.33 KB
Field effect power transistor.
~[R3D~ [F~lr FIELD EFFECT POWER TRANSISTOR IRFD1Z0,1Z1 D82AL29K2 0.5 AMPERES 100, 60 VOLTS RDS(ON) = 2.4 !1 This series of N-Channel Enhancement-mod.
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